RF IC Design Engineer – GaN

I am recruiting an RF IC Design Engineer with expertise in Gallium Nitride technology. This is an exciting opportunity to join a cutting-edge team working on next-generation RF solutions. The role offers remote flexibility for engineers based in Spain. Responsibilities Will Include But Are Not Limited To

• Design and develop RF ICs with a focus on GaN-based power amplifiers and LNAs.
• Perform circuit-level design, simulation, and layout for RF ICs.
• Optimize amplifier performance for efficiency, linearity, and power output.
• Conduct EM simulations and RF measurements to validate designs.
• Work closely with process engineers and layout teams to ensure design manufacturability.
• Collaborate with system architects to define specifications and system integration.
• Support product validation, characterization, and troubleshooting.

I am looking for an individual with experience in some of the following areas:

• Experience in RF IC design, with a strong focus on GaN technology.
• Hands-on expertise in power amplifier and LNA design.
• Strong understanding of RF circuit design principles, including impedance matching, stability analysis, and non-linear effects.
• Proficiency in Cadence, ADS, HFSS, or other relevant RF design tools.
• Experience with wafer-level characterization and measurement techniques.
• Knowledge of RF packaging, parasitic extraction, and layout considerations.
• Strong problem-solving skills and the ability to work independently.
• Excellent communication skills in English.

To be considered for this position, you must have experience in GaN-based RF solutions. No visa sponsorship is available. Please get in touch with Parm Shergill for more information.